雙向負(fù)阻晶體管動(dòng)態(tài)伏安特性的實(shí)驗(yàn)研究
STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT
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摘要: 本文研究了雙向負(fù)阻晶體管(Bidirectional Negative Resistance Transistor,簡稱BNRT)在張弛振蕩電路中的動(dòng)態(tài)伏安特性。借助動(dòng)態(tài)伏安特性對(duì)BNRT張弛振蕩電路的一些性質(zhì)進(jìn)行了分析。實(shí)驗(yàn)結(jié)果與計(jì)算結(jié)果一致。本文還對(duì)改進(jìn)器件結(jié)構(gòu)的設(shè)計(jì),以便使器件達(dá)到更高的振蕩頻率提供了理論依據(jù)。
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關(guān)鍵詞:
- 半導(dǎo)體器件; 負(fù)阻器件; 張弛振蕩器
Abstract: Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency. -
李鳳銀,周旋,李錦林,曹體倫,電子學(xué)報(bào),1984年,第4期,第112頁.[2]李鳳銀,周旋,李錦林,曹體倫,半導(dǎo)體學(xué)報(bào),5(1984)6,698-701.[3]周旋,鮑秉乾,電子科學(xué)技術(shù),15(1985)5,4-7.[4]余道衡,電子科學(xué)技術(shù),17(1987)5,33-36.[5]裴留慶,郭汾,謝劍光,自然數(shù)周期序列與混沌,中國第七屆電路與系統(tǒng)年會(huì)論文集,1987年,深圳, 13-18頁.[6]余道衡,朱照宜,電子科學(xué)學(xué)刊,9(1987)2,176-180.[7]Wang Shou-wu, et al., PIEE, 69(1981), 130-139.[8]J. Millman, H. Taub, Pulse, Digital and Switching Waveforms, McGraw-Hill Book Co. Chapter 6, (1965).[9]劉文生,李錦林,取樣技術(shù)原理與應(yīng)用,科學(xué)出版社,1981年,第153-156頁. -
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