雙注入型磁敏二極管的設(shè)計
A DESIGN OF DOUBLE INJECTION TYPE MAGNETO-DIODE
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摘要: 本文探討了在P+IN+型長二極管的一個側(cè)面設(shè)置高復(fù)合區(qū)的鍺磁敏二極管的設(shè)計,給出了選擇長度(l)、厚度(d)、寬度(w)和電阻率()的最佳設(shè)計關(guān)系式: /w(l/d)310.75(△T)2/I03Rth2,式中 △T為磁敏二極管的最大溫升,Rth為管子的熱阻,I0為通過管子的偏流。
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關(guān)鍵詞:
Abstract: A new design is proposed for long P+IN+ type Ge magnetodiode with a high recombination region on one side. The optimal relation is established between its length (l), depth (d), width () and resistivity () for designing Ge magnetodiode: (/) (l/d)3=10.75(△T)2/(I03Rth2) △T is the limit of chip temperature rise, Rth the thermal resistance, I0 the current flowing through diode. -
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