晶體管非線性失真分析
NONLINEAR DISTORTION ANALYSIS OF BIPOLARTRANSISTOR
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摘要: 本文從器件物理和結(jié)構(gòu)上提出雙極型晶體管非線性失真模型。模型包含8個(gè)參量:(1)有效基區(qū)展寬效應(yīng);(2)發(fā)射極電流集邊效應(yīng);(3)基區(qū)電導(dǎo)調(diào)制效應(yīng);(4)發(fā)射結(jié)電阻的非線性效應(yīng);(5)發(fā)射結(jié)電容的非線性效應(yīng);(6)集電結(jié)電容的非線性效應(yīng);(7)寄生電容的非線性效應(yīng);(8)電流放大系數(shù)和雪崩倍增效應(yīng)與電壓的非線性關(guān)系。利用Taylor級(jí)數(shù)展開(kāi)分析各模型參數(shù),并編制了計(jì)算程序,定量計(jì)算了互調(diào)失真與工作頻率、發(fā)射極條寬、基區(qū)寬度、發(fā)射極線電流密度,基區(qū)摻雜濃度等重要參數(shù)的關(guān)系。計(jì)算結(jié)果與實(shí)驗(yàn)結(jié)果基本吻合。
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關(guān)鍵詞:
- 晶體管; 失真; 非線性分析
Abstract: An AC small-signal transistor model incorporating 8 nonlinearities using Taylor series representations is described. Based on this method, a nonlinear distortion-analysis program has been developed. It is used to compute the third-order intermodulation distortion IMs. The relations between IM3 and the operating frequency, emitter and base widths, emitter line current density and doped impurity concentration on base are obtained. -
S. Narayanan, Bell Sys. Tech. J., 46(1967)5, 991-1024.[2]J. T, Chea, C. P. Snapp, IEEE Trans, on MTT, MTT-27(1979), 423-430.[3]H. C. Poon, IEEE Trans, on ED, ED-19(1972), 719-739.[4]Y. L. Kao, IEEE Trans, on CT, CT-20(1973), 709-716.[5]H. Abraham, R. G. Meyer, IEEE Trans, on ED, ED-23(1976), 1290-1299.[6]O. Muler, Proc. IEEE., 58(1970)7, 1112-1121.[7]陳星弼,唐茂成,晶體管原理與設(shè)計(jì),成都電訊工程學(xué)院出版社,1987年. -
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