InGaAsP/InP雙異質(zhì)結(jié)發(fā)光管暗缺陷的觀察和研究
OBSERVATION AND STUDY ON THE DARK DEFECTS IN InGaAsP/InP DOUBLE-HETEROSTRUCTURE LEDS
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摘要: 用紅外電視選行掃描儀觀察由不同P型摻雜劑的外延片制成的InGaAsP/InP雙異質(zhì)結(jié)發(fā)光管的暗缺陷,并研究了它的來源。比較了P型摻雜劑的種類和摻雜濃度對暗結(jié)構(gòu)的影響。結(jié)果表明,摻Mg和摻In-Zn合金與重?fù)絑n器件相比,暗結(jié)構(gòu)比例明顯降低。Zn可能是暗缺陷的重要來源之一。器件在70℃,85℃條件下老化2000小時后,老化前無暗缺陷的某些器件亦有暗結(jié)構(gòu)產(chǎn)生,但其生長率很慢。
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關(guān)鍵詞:
Abstract: The dark defects in InGaAsP/InP DH LEDs are observed with an infrared line scanner. The dark structure appears before aging and it exists mainly in the form of dar kspot defect. The effect of the variety and concentration of the doping for p-InP confining layers on the dark defects is studied. The results show that the percentage of devices with dark defects is much lower for Mg or In-Zn doped devices than for Zn doped devices. It is believed that Zn is one of the important orign for the formation of dark defects. The growth rate of dark defects is studied both at room temperature and at 70--85℃. The results show that after aging for 15000 h at room temperature there are no dark defects newly appeared. But after agin for 2000 h at 70--85℃ some devices show newly formed dark structure with very slow growth rate. -
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