雙柵極場發(fā)射陣列的特性模擬與設計
SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS
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摘要: 具有聚焦能力的雙柵極場發(fā)射陣列(DGFEA)是兩類最有發(fā)展前途的真空微電子器件(高分辨率場發(fā)射顯示器和真空微電子微波、毫米波器件)的關鍵技術。本文簡要比較了兩種結(jié)構的DGFEA的主要性能和優(yōu)缺點,敘述了雙層柵極結(jié)構DGFEA的設計與模擬方法.從模擬計算獲得的發(fā)射特性和聚焦性能可以看到:這種結(jié)構的DGFEA能獲得幾乎平行的場發(fā)射電子束,其最大發(fā)射電流密度可達到約500A/cm2以上,是發(fā)展真空微電子微波、毫米波器件和其它強流電子注器件等較理想的電子源。Abstract: One of the crucial technologies for developing high resolution field emitter displays and vacuum microelectronic devices in microwave and millimeter-wave bands is the design and fabrication of field emitter arrays which can provide with focused electron beam. After having a brief discussion of two kinds of double-gated field emission arrays (DGFEA), the concentric focusing (in plane gates) and the aperture focusing (2-tier gates), presented in the paper are the design and simulation methods of the aperture focusing DGFEA, and simulation results about its emission characteristics and focusing performance. It is believed from the results that the DGFEA can produce a pretty parallel electron beam, its maximum emission current density may exceed 300 A/cm2 and it meets the major requirements for developing microwave and millimeter-wave devices, and other strong beam devices.
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