p型Si1-xGex應變層中重摻雜禁帶窄變的計算
CALCULATION OF THE BANDGAP NARROWING DUE TO HEAVY DOPING IN p-TYPE STRAINED Si1-xGex LAYERS
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摘要: 針對應變Si1-xGex的應變致價帶分裂和重摻雜對裂值的影響,提出了該合金價帶結構的等價有效簡并度模型。模型中考慮了非拋物線價帶結構。應用這個模型,計算了贗晶生長在100Si襯底上的p型Si_(1-x)Ge_x應變層的重摻雜禁帶窄變,發(fā)現(xiàn)當雜質濃度超過約2～31019cm-3后,它在某一Ge組分下得到極大值,而當摻雜低于此濃度時,它則隨Ge組分的增加單調下降。與實驗報道的對比證實了本模型的有效性。
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關鍵詞:
- 鍺硅合金; 應變; 重摻雜; 能帶結構
Abstract: To take the effects of strain induced splitting and non-parabolicity of valence band into account when calculating the bandgap narrowing (BGN) due to heavy doping in p-type pseu-domorphic Si1-xGex layers grown on 100 Si substrate, an equivalent effective degeneracy (EED) model is proposed for the valence band structure of the strained alloy. The calculation results agree very well with published experimental data and show that there is a maximum value of the BGN at a certain Ge fraction if dopant concentration exceeds about 2～3 1019cm-3, and that, otherwise, it will decrease continuously as Ge fraction increases. -
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