砷化鎵汽相外延中Cd的行為和p-n結(jié)材料的制備
THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM
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摘要: 正 一、引言 在CaAs氣相外延中,除了用各種摻雜劑制得n型材料外,也有少量工作述及P型外延層的制備。鑒于P型材料可用作雙漂移二極管和太陽能電池,本文在GaAsCl3-H2體系中采用元素Cd為摻雜劑,研究了Cd的摻雜行為并制得了各種結(jié)構(gòu)的p-n材料
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關(guān)鍵詞:
Abstract: The incoporation and the behavior of impurity Cd in VPE of GaAs were studiecl using elemental Cd as a dopant in Ga-AsCl3-H2 system. The distribution coefficient of Cd and its solubility in GaAs were found to be 0.01-0.001 and 41018 cm-3 respectively. The relationship between the electrical properties and epitaxial parameters has been discussed. As a result, the epilayers whh p-n or p+-p-n junction were prepared using elemental S and Cd doping techniques. The materials obtained in this way have a smooth surface morphology and a good interfacial properties. -
Peng Ruiwu(彭瑞伍), J. Crystal Growth, 56(1982), 350.[2]彭瑞伍,孫裳珠,沈松華,電子科學(xué)學(xué)刊,5(1983) 16.[3]J. Chermier et al., J. Appl. Phys., 53 (1983), 3247.[4]彭瑞伍,江文達(dá),孫裳珠等,第七次國際晶體生長會議摘要集,西德,1983.[5]Y. G. Sidorov and L. F. Uasilesa, J. Electrochem. Soc., 123(1976), 698.[6]彭瑞伍,1983年全國砷化稼和有關(guān)化合物會議摘要集,上海,1983.[7]S. M. Sze and J. C. Irrin, Solid State Electron., 11(1976), 599.[8]邵永富,陳自姚,彭瑞伍,半導(dǎo)體學(xué)報,3(1982), 216. -
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