低溫ECL電路的瞬態(tài)特性分析
ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE
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摘要: 本文對(duì)ECL電路的瞬態(tài)特性進(jìn)行了較詳盡的分析,給出了適于全溫區(qū)的較精確的電路延遲時(shí)間表達(dá)式,并對(duì)影響tpd的主要參數(shù)的溫度特性進(jìn)行了分析。該模型可用于各種溫度下高速器件和電路的優(yōu)化設(shè)計(jì)。
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關(guān)鍵詞:
- ECL電路; 低溫; 瞬態(tài); 延遲時(shí)間
Abstract: Detailed analysis of transient characteristics of ECL circuits is performed in this paper, then a relatively exact propagation delay expression applied to all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures. -
Cressler J D, Tang D D, Jenkins K A, et al. IEEE Trans. on ED, 1989, 36(8): 1489-1502.[2]Cressler J D, Tang D D, Jenkins K A, et al. Low-Temperature Operation of Silicon Bipolar ECL Circuits. ISSCC Tech. Dig., New Fork: 1989, 228-229.[3]Stork J M C. Bipolar Transistor Scaling for Minimum Switching Delay and Energy Dissipation. IEDM Tech Dig., San Francisco: 1988, 550-553.[4]李垚, 沈克強(qiáng),魏同立.固體電子學(xué)研究與進(jìn)展,1995, 15(1):26-32.[5]李垚, 魏同立, 沈克強(qiáng).東南大學(xué)學(xué)報(bào), 1995, 20(3): 39-38.[6]Satake H,Hamasaki T. IEEE Trans. on ED, 1990, ED-37(7): 1688-1697. -
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