利用FFT圖象檢測和分析砷化鎵材料中的缺陷
FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS
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摘要: 砷化鎵材料中缺陷的不均勻分布嚴(yán)重地限制了集成電路生產(chǎn)的重復(fù)性。本文首次提出一種利用傅里葉變換頻譜圖象檢測和分析沿110和010方向上位錯缺陷的統(tǒng)計分布的方法,稱為FTIT檢驗法。文中定義的相參系數(shù)和紋理復(fù)雜系數(shù)是定量地檢驗制造集成電路材料中缺陷的重要指標(biāo)。
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關(guān)鍵詞:
- 紅外圖象; 砷化鎵; FTIT
Abstract: The presence of inhomogeneous distribution of defects in GaAs wafers strongly limits the reproducibility of IC fabrication processes. In this paper, we report for the first time a Fourier transformation image testing approach, called FTIT, for the two dimensional evaluation of the disorder in a wafer, as it appears in infrared transmission timages. The Fourier analysis of the cell structure reveals a dominat statistical rectangular organization of the dislocations along 110 and 010 directions. The and defined in the paper are typical organization of the cells to evaluate quantitatively the properties of IC materials. -
J. P. Fillard.[J].Comptes Rendus de la Confrence, Karinzawl, France, July.1984,:-[2]V. Milutinovic, Computer 19, 10(1986), 235-240.[3]J. Bonnafe.[J].et al., DRIP Symposium, ed. by J .P. Fillard, Materials Sciences Monographs, n31, Elsevier.1985,:-[4]M. Kunt,Traitement Numerique des Signaux, Dunod, 1981, pp. 101-110.[5]Zhang Fugui, These de Doctoral, Universite des Sciences et Techniques du Langudoc Montpellier, France, 1986, pp. 98-110.[6]C. G. Lendaris, G. L.Stanley, Proc. IEEE, 2(1970), 50-58.[7]J. Logowski, et al., Semi-insulating III-V Materials, Conf. Kah. nee ta, 1984, U. S. A., pp. 200-205.[8]M. P. Scott.[J].DRIP Materials Science Monographs, n31 Elsevier, ed. by J. P. Fillard.1985,:-M. Bonnet.[J].et al., DRIP Materials Science Monographs, n31 Elsevier, ed by J. P. Fillard.1985,:- -
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