一種新穎的具有HEMT和GaAs MMIC的Ku波段低噪聲放大器
A NOVEL Ku-BAND LOW NOISE AMPLIFIER WITH HEMT AND GaAs MMIC
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摘要: 本文介紹了一種具有高電子遷移率晶體管(HEMT)和砷化鎵單片微波集成電路(GaAs MMIC)的Ku波段低噪聲放大器。在11.7～12.2GHz頻率范圍內(nèi),該放大器的噪聲系數(shù)小于1.9dB,相關(guān)增益大于27dB,輸入和輸出駐波比小于1.4。放大器第一級(jí)采用了HEMT和微波串聯(lián)電感反饋技術(shù),放大器未級(jí)采用了Ku波段GsAs MMIC。設(shè)計(jì)的關(guān)鍵是采用微波串聯(lián)電感反饋方法同時(shí)獲得最佳噪聲和最小輸入駐波匹配。放大器的輸入端和輸出端均為BJ-120波導(dǎo)。Abstract: A novel Ku-band low noise amplifier with high electron mobility transis-ror (HEMT) and GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noise figure is less than 1.9dB with an associated gain over 27dB and an input-output VSWR less than 1.4 in the frequency range of 11.7-12.2 GHz. The HEMT and the microwave series inductance feedback technique arc used in the first stage of the amplifier, and the Ku-band MMIC is used in the last stage. The key to this design is to achieve a simultaneous optimum noise match and a minimum input VSWR match by using the microwave series inductance feedback method. The BJ-120 waveguides are used in both input and output of the amplifier.
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戴永勝等,固體電子學(xué)研究與進(jìn)展,7(1987)2,150-156.[2]H. Rothe, W. Dahlke. Proc. IRE, 44(1956) 6, 811-818.[3]S. Lversen Proc. IEEE. 64(1975) 3. 540-542.[4]Sander Weinmb, IEEE Trans. on MTT, MTT-30 (1982)6. 849-853.[5]戴永勝,固體電子學(xué)研究與進(jìn)展,7(1987)1,84-85.[6]戴永勝,固體電子學(xué)研究與進(jìn)展,10(1990)4,406-407. -
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