多層a-Si∶H/a-SiNx∶H薄膜中氫含量的研究
A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS
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摘要: 將PECVD方法制備的多層a-Si∶H/a-SiNx∶H膜在N2氣氛中進行不同溫度的退火處理后,利用紅外吸收譜、核反應(yīng)方法,次級離子質(zhì)譜(SIMS)和透射電鏡(TEM)對膜中氫從表面滲出及其與溫度的依賴關(guān)系進行了測試和分析。最后對氫的外擴散現(xiàn)象提出了幾種可能的簡單解釋。
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關(guān)鍵詞:
- 非晶硅; 多層膜; 退火處理; 氫的外擴散
Abstract: The hydrogen effusion and its temperature dependence in semiconducting amorphous a-si:H/a-SiN,:H multilayer films prepared by PECVD has been studied using IR absorption, nuclear reaction method, SIMS and TEM. Some possible interpretations are presented for out-diffusion of hydrogen in the films. -
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