MCP中單通道電子倍增參數(shù)的Monte Carlo模擬計(jì)算
MONTE CARLO SIMULATION AND COMPUTATION OF SINGLE CHANNEL MULTIPLYING PARAMETERS IN MCP
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摘要: 本文用Monte Carlo方法對(duì)電子在MCP單通道中傳輸,碰撞和次級(jí)發(fā)射的整個(gè)過程進(jìn)行了模擬。給出了MCP中次級(jí)電子能量分布表達(dá)式。計(jì)算了MCP中單通道電子倍增的有關(guān)參數(shù),并對(duì)比實(shí)驗(yàn)數(shù)據(jù)討論了模型及其結(jié)果的合理性。
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關(guān)鍵詞:
- 微通道板; Monte Carlo方法; 次級(jí)電子發(fā)射; 電子倍增
Abstract: Monte Carlo method is used to simulate the whole courses of electronictransportation, collision and secondary emission in a single channel of MCP. The energy distribution formula of secondary electron of MCP is derived. Each parameter of a single channel in MCP is calculated and discussed. -
G.E. Hill, Advanced Electronics ancl Electronic Physics, 140A, (1976), pp. 153-165.[2]汪金祥,特種坡璃,3(1986)3,20-25.[3]國(guó)營(yíng)旭光儀器廠,旭光情報(bào),1984年,第1期,第100-140頁(yè).[4]汪金祥,高速攝影與光子學(xué),1986年,第4期,第29-33頁(yè).[5]A.J. Guest, Acta Etectronica, 14(1972)1, 99-110.[6]鄒異松,電真空成像器件及理論分析,國(guó)防工業(yè)出版社,北京,1990.[7]胡漢泉等,真空物理與技術(shù)及其在電子器件中的應(yīng)用〔下冊(cè)),第12章,國(guó)防工業(yè)出版社,北京,1985年.[8]M. Brown et al., Vacuum. 25(1975)2, 61-63.[9]劉德貴等,Fortran算法匯編,第二分冊(cè),國(guó)防工業(yè)出版社,北京,1983年. -
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