i-GaAlAs/GaAs HIGFETs器件參數(shù)的有限元分析
THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD
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摘要: 本文用有限元法對(duì) i-GaAlAs/GaAs HIGFETs的穩(wěn)態(tài)特性進(jìn)行了二維數(shù)值模擬和分析。為了在有限內(nèi)存的微機(jī)中,進(jìn)行快速計(jì)算,在程序中,對(duì)邊界條件,網(wǎng)格剖分和初值選取等方面進(jìn)行了改進(jìn)。使計(jì)算的收斂速度和精度有了提高。可方便地得到器件內(nèi)部的電位和載流子濃度等物理量的二維分布。其輸出特性和實(shí)驗(yàn)數(shù)據(jù)基本吻合。
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關(guān)鍵詞:
- 絕緣柵場(chǎng)效應(yīng)晶體管; 有限元分析; 二維數(shù)值模擬
Abstract: Two dimensional numerical simulation and analysis for the static state characteristics of i-GaAlAs/i-GaAs HIGFETs by using finite-element method are presented. Some improvements have been made on the boundary conditions, mesh generation and estimation of initial values in the program. The electron concentration and potential distribution etc. inside the HIGFETs are computed. The results of its output characteristics are in good agreement with the experimental data. -
K. Dingle et al., Appl.Phys. Lett, 33(1976)1, 665-668.[2]N. C. Cirillo et al., IEEE Electron Device Lett, 7(1986)7, 645-647.[3]汪正孝,半導(dǎo)體學(xué)報(bào),5(1984)2,178-188.[4]K. Natsumoto et al, IEEE Electron Device Lett, 3(1986)7, 182-187.[5]I. J. Barnet et al., IEEE Trans. on ED. ED-18(1977)4, 1082-1091.[6]談根林等,電子學(xué)報(bào),15(1987)2,94-103.[7]N. S. Shur et al., IEEE Electron Device Lett, 2(1986)7, 78-83.[8]K. Yamagushi et al., IEEE Trans. on ED, ED-23(1986)5, 1283-1294. -
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