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激光再結(jié)晶和氫退火對多晶硅電學(xué)性質(zhì)的影響

方芳,  林成魯,  沈宗雍,  鄒世昌

方芳, 林成魯, 沈宗雍, 鄒世昌. 激光再結(jié)晶和氫退火對多晶硅電學(xué)性質(zhì)的影響[J]. 電子與信息學(xué)報(bào), 1986, 8(1): 45-51.
引用本文: 方芳, 林成魯, 沈宗雍, 鄒世昌. 激光再結(jié)晶和氫退火對多晶硅電學(xué)性質(zhì)的影響[J]. 電子與信息學(xué)報(bào), 1986, 8(1): 45-51.
Fang Fang, Lin Chenglu, Slien Zongyong, Zou Shichang. THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON[J]. Journal of Electronics & Information Technology, 1986, 8(1): 45-51.
Citation: Fang Fang, Lin Chenglu, Slien Zongyong, Zou Shichang. THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON[J]. Journal of Electronics & Information Technology, 1986, 8(1): 45-51.

激光再結(jié)晶和氫退火對多晶硅電學(xué)性質(zhì)的影響

THE INFLUENCE OF LASER RECRYSTALLIZATION AND PLASMA HYDROGEN ANNEALING ON THE ELECTRICAL PROPERTIES OF POLYSILICON

  • 摘要: 連續(xù)Ar+激光再結(jié)晶能使多晶硅的電阻率下降,遷移率顯著增高,對離子注入劑量為5101151015cm-2的多晶硅經(jīng)激光再結(jié)晶后再進(jìn)行等離子氫退火,能使其電學(xué)性質(zhì)得到進(jìn)一步改善,更接近于單晶硅.摻雜濃度為11017cm-3時(shí),電阻率從1.2cm下降到0.45cm,遷移率從 62cm2/Vs增高到 271cm2/Vs,電激活能從 0.03eV下降到-0.007eV,晶界陷阱態(tài)密度從3.71011cm-2下降到 1.71011cm-2)。本文在現(xiàn)有多晶硅導(dǎo)電模型的基礎(chǔ)上.提出了大晶粒(L=15m)多晶硅的計(jì)算公式。結(jié)果表明,在摻雜濃度在1101611020cm-3的范圍內(nèi),理論和實(shí)驗(yàn)符合較好。
      關(guān)鍵詞:
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    Abstract: Asenic ions are implanted with doses of 5101151015 cm-2 into LPCVD polysilicon films o nSiO2 substrate, which have been recrystallized with CW Ar+ laser before implantation. Electrical measurements show that its resistivity is lowered and its mobility is inereased significamtly at low doping concentration (1017 As+cm-3). Plasma hydrcgen annealing is performed on laser recrystallized samples. The electrieal character is ics of plasma hydrogen annealed samples are close to that of single-crystalline silicon. Based on the existing theoretical modelsforconduction in polysilicon, a new formula for large grain polysilicon has been proposed, with help of which a good agreement between the theory and experimental results is achieved in the range of doping concentration from 1016cm-3 to 1020cm-3.
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  • 鄒世昌,沈宗雍,林成魯,倪如山,林梓鑫,姚良騏,朱桂楓,電子學(xué)報(bào),1983年,第5期,第1頁.[2]S. Kawamura, N. Sasaki, T. Iwai, M. Nakano and M. Takagi, IEEE Electron Device Letters,EDL-4 (1983 ), 366.[3]中野元雄,電子材料,23(1984), 54.[4]J.Y. W. Seto, J. Appl. Phys., 46(1975), 5247.[5]N. C. C. Lu, L. Gerzberg, C. Y. Lu and J. D. Meindl, IEEE Trans. on ED, ED-28 (1981), 818.[6]M. M. Mandurah, K. C. Saraswat and T. I. Kamins, ibid ED-28 (1981), 1163.[7]N. C. C. Lu, L. Gerzberg, C. Y. Lu and J. D.Meindl, ibid, ED-30(1983), 137.[8]J. P. Colinge, E. Demoulin and H. Morel, IEDM Tech. Dig., Dec. 1982.[9]J. G. Fossum and A. O. Conde, IEEE Trans. on ED, ED-30(1983), 933.
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出版歷程
  • 收稿日期:  1900-01-01
  • 修回日期:  1900-01-01
  • 刊出日期:  1986-01-19

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