在p+GaAs體單晶材料上進(jìn)行的NEA活化實(shí)驗(yàn)
EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs
-
摘要: NEA活化實(shí)驗(yàn)是利用體單晶材料進(jìn)行的,未經(jīng)任何外延或真空解理手續(xù)。為確立活化工藝,特別是表面清潔處理規(guī)范,作了相應(yīng)AES分析。借助于測(cè)量樣品附近高純Al的熔點(diǎn)以校準(zhǔn)及控制樣品表面的溫度。在不太好的本底真空(210-7610-7Pa)條件下,活化好的GaAs樣品之白光光電靈敏度可達(dá)1000A/lm以上。
-
關(guān)鍵詞:
- NEA GaAs活化; 表面清潔; 表面溫度控制
Abstract: The activation experiments have been conducted with bulk p+ GaAs single crystal samples without any additional epitaxy or cleavage in vacuum. AES analysis is used to assist the establishment of surface cleaning processing. The easy determination of fusion point of pure Al nearby the sample helped us out the surface temperature control problem. The samples treated at relatively low background vacuum (2-610-7Pa) have a white light photoemission as high as 1000A/lm. -
Л.Й.Ангонова,Письма в ЖТФ.,11(1985), 602-604.[2]P. W. Hawkes, Advances in Electronics and Electron Physics, Third-Generation Image Intensifier, 64A(1985), 71-75.[3]A. J. Van Bommel, J. E. Crombeen, Surf. Sci., 57(1976), 109-117.[4]B. Coldstein, Surf. Sci., 47(1975), 143-161.[5]E. J. Thrust, J. Phys. E:Sci. Inssrum., 11(1978), 327-332.[6]郭太良,王敏,黃振武,高懷容,GaAs負(fù)電子親合勢(shì)光電陰極的研究,中國(guó)電子學(xué)會(huì)第六屆學(xué)術(shù)年會(huì)論文集,北京,1988年,第122-124頁.[7]D. L. Schaefer, US Patent, 3672992, June 27,(1972).[8]江丕蘇,侯詢,張煥文,真空電子技術(shù),1986年,第3期,第1-2頁.[9]B. J. Stocker, Surf. Sci., 47(1975), 501-513.[10]王乃鑄,王化文,半導(dǎo)體技術(shù),1987年,第1期,第13-17頁.[11]G. A. Antypas, J, Edgecumbe, Appl. Phys. Letters. 26(1975), 371-372. -
計(jì)量
- 文章訪問數(shù): 1939
- HTML全文瀏覽量: 112
- PDF下載量: 492
- 被引次數(shù): 0
下載:
