低溫多晶硅發(fā)射極晶體管電流增益模型和模擬
MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR
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摘要: 本文考慮禁帶變窄效應、載流子凍析效應和多晶硅/單晶硅界面復合與氧化層隧穿效應,采用有效復合速度方法,建立了多晶硅發(fā)射極晶體管電流增益的溫度關系模型。模擬計算結果與實驗符合較好。Abstract: A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data.
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